Tseng Hsing-Huang : rechercher sur Z-Library

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Articles (72)
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1

Improved low frequency noise characteristics of sub-micron MOSFETs with TaSiN/TiN gate on ALD HfO2 dielectric

Siva Prasad Devireddy, Bigang Min, Zeynep Çelik-Butler, Hsing-Huang Tseng, Philip J. Tobin, Ania Zlotnicka

Journal:

Microelectronics Reliability

Année:

2007

Langue:

english

Fichier:

PDF, 178 KB

english, 2007

2

Highly Manufacturable Double-Gate FinFET With Gate-Source/Drain Underlap

Ji-Woon Yang, Zeitzoff, P.M., Hsing-Huang Tseng

Journal:

IEEE Transactions on Electron Devices

Année:

2007

Langue:

english

Fichier:

PDF, 366 KB

english, 2007

3

Gate-First Integration of Tunable Work Function Metal Gates of Different Thicknesses Into High-/Metal Gates CMOS FinFETs for Multi- Engineering

Hussain, M.M., Smith, C.E., Harris, H.R., Young, C.D., Hsing-Huang Tseng, Jammy, R.

Journal:

IEEE Transactions on Electron Devices

Année:

2010

Langue:

english

Fichier:

PDF, 866 KB

english, 2010

4

Impact of Millisecond Flash-Assisted Rapid Thermal Annealing on SiGe Heterostructure Channel pMOSFETs With a High-/Metal Gate

Se-Hoon Lee, Majhi, P., Ferrer, D.A., Pui-Yee Hung, Huang, J., Oh, J., Wei-Yip Loh, Sassman, B., Byoung-Gi Min, Hsing-Huang Tseng, Harris, R., Bersuker, G., Kirsch, P.D., Jammy, R., Banerjee, S.K.

Journal:

IEEE Transactions on Electron Devices

Année:

2011

Langue:

english

Fichier:

PDF, 964 KB

english, 2011

5

Reliability of La-Doped Hf-Based Dielectrics nMOSFETs

Chang Yong Kang,, Kirsch, P.D., Byoung Hun Lee,, Hsing-Huang Tseng,, Jammy, R.

Journal:

IEEE Transactions on Device and Materials Reliability

Année:

2009

Langue:

english

Fichier:

PDF, 1.55 MB

english, 2009

6

[RTP 9th International Conference on Advanced Thermal Processing of Semiconductors. RTP 2001 - Anchorage, AK, USA (25-29 Sept. 2001)] 9th International Conference on Advanced Thermal Processing of Semiconductors, RTP 2001 - High performance ultra-thin silicon nitride gate dielectrics prepared by in-situ RTCVD techniques

Jeon, J.S., Qi Xiang,, Kim, H.S., Hsing-Huang Tseng,, Ogle, B.

Année:

2001

Langue:

english

Fichier:

PDF, 487 KB

english, 2001

7

A low-frequency noise model for advanced gate-stack MOSFETs

Zeynep Çelik-Butler, Siva Prasad Devireddy, Hsing-Huang Tseng, Philip Tobin, Ania Zlotnicka

Journal:

Microelectronics Reliability

Année:

2009

Langue:

english

Fichier:

PDF, 759 KB

english, 2009

8

Highly scaled (Lg ∼ 56 nm) gate-last Si tunnel field-effect transistors with ION > 100 μA/μm

Wei-Yip Loh, Kanghoon Jeon, Chang Yong Kang, Jungwoo Oh, Tsu-Jae King Liu, Hsing-Huang Tseng, Wade Xiong, Prashant Majhi, Raj Jammy, Chenming Hu

Journal:

Solid-State Electronics

Année:

2011

Langue:

english

Fichier:

PDF, 660 KB

english, 2011

9

Low-frequency noise in submicrometer MOSFETs with HfO2, HfO2/Al2O3 and HfAlOx gate stacks

Bigang Min, Devireddy, S.P., Celik-Butler, Z., Fang Wang, Zlotnicka, A., Hsing-Huang Tseng, Tobin, P.J.

Journal:

IEEE Transactions on Electron Devices

Année:

2004

Langue:

english

Fichier:

PDF, 597 KB

english, 2004

10

Low-frequency noise in TaSiN/HfO2 nMOSFETs and the effect of stress-relieved preoxide interfacial layer

Devireddy, S.P., Bigang Min, Celik-Butler, Z., Hsing-Huang Tseng, Tobin, P.J., Fang Wang, Zlotnicka, A.

Journal:

IEEE Transactions on Electron Devices

Année:

2006

Langue:

english

Fichier:

PDF, 507 KB

english, 2006

11

Reliability study of methods to suppress boron transient enhanced diffusion in high-k/metal gate Si/SiGe channel pMOSFETs

Park, Min Sang, Kim, Yonghyun, Lee, Kyong Taek, Kang, Chang Yong, Min, Byoung-Gi, Oh, Jungwoo, Majhi, Prashant, Tseng, Hsing-Huang, Lee, Jack C., Banerjee, Sanjay K., Lee, Jeong-Soo, Jammy, Raj, Jeong

Journal:

Microelectronic Engineering

Année:

2013

Langue:

english

Fichier:

PDF, 820 KB

english, 2013

12

A Study of Strain Engineering Using CESL Stressor on Reliability Comparing Effect of Intrinsic Mechanical Stress

Kyong Taek Lee, Chang Yong Kang, Min-sang Park, Byoung Hun Lee, Ho Kyung Park, Hyun Sang Hwang, Hsing-huang Tseng, R. Jammy, Yoon-ha Jeong

Journal:

IEEE Electron Device Letters

Année:

2009

Langue:

english

Fichier:

PDF, 431 KB

english, 2009

13

BTI characteristics and mechanisms of metal gated HfO/sub 2/ films with enhanced interface/bulk process treatments

Kalpat, S., Hsing-Huang Tseng,, Ramon, M., Moosa, M., Tekleab, D., Tobin, P.J., Gilmer, D.C., Hegde, R.I., Capasso, C., Tracy, C., White, B.E.

Journal:

IEEE Transactions on Device and Materials Reliability

Année:

2005

Langue:

english

Fichier:

PDF, 636 KB

english, 2005

14

Effective Modulation of Ni Silicide Schottky Barrier Height Using Chlorine Ion Implantation and Segregation

Wei-Yip Loh,, Etienne, H., Coss, B., Ok, I., Turnbaugh, D., Spiegel, Y., Torregrosa, F., Banti, J., Roux, L., Pui-Yee Hung,, Jungwoo Oh,, Sassman, B., Radar, K., Majhi, P., Hsing-Huang Tseng,, Jam

Journal:

IEEE Electron Device Letters

Année:

2009

Langue:

english

Fichier:

PDF, 295 KB

english, 2009

15

[IEEE Technical Papers. International Symposium on VLSI Technology, Systems, and Applications - Taipei, Taiwan (June 3-5, 1997)] Proceedings of Technical Papers. International Symposium on VLSI Technology, Systems, and Applications - The Effects Of Passivation And Post Passivation Anneal On The Integrity Of Thin Gate Oxides

Gelatos, C., Hsing-Huang Tseng,, Filipiak, S., Sieloj, D., Grant, J., Tobin, P., Cotton, R.

Année:

1997

Langue:

english

Fichier:

PDF, 556 KB

english, 1997

16

[IEEE 2008 IEEE International Integrated Reliability Workshop Final Report (IRW) - South lake Tahoe, CA, USA (2008.10.12-2008.10.16)] 2008 IEEE International Integrated Reliability Workshop Final Report - Effect of substrate hot carrier stress on high-k gate stack

Park, Hokyung, Bersuker, Gennadi, Kang, Chang Yong, Young, Chadwin, Tseng, Hsing-Huang, Jammy, Raj

Année:

2008

Langue:

english

Fichier:

PDF, 4.08 MB

english, 2008

17

[IEEE Fifth International Conference on Solid-State and Integrated Circuit Technology-ICSICT'98 - Beijing, China (21-23 Oct. 1998)] 1998 5th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.98EX105) - Silicon nitride gate dielectric for advanced technology

Hsing-Huang Tseng,

Année:

1998

Langue:

english

Fichier:

PDF, 242 KB

english, 1998

18

SPIE Proceedings [SPIE SPIE Third International Symposium on Fluctuations and Noise - Austin, TX (Monday 23 May 2005)] Noise in Devices and Circuits III - Flicker noise characteristics of MOSFETs with HfO 2 , HfAlO x , and Al 2 O 3 /HfO 2 gate dielectrics

Devireddy, Siva P., Balandin, Alexander A., Danneville, Francois, Min, Bigang, Celik-Butler, Zeynep, Deen, M. Jamal, Fleetwood, Daniel M., Wang, Fang, Zlotnicka, Ania, Tseng, Hsing-Huang, Tobin, Phili

Année:

2005

Langue:

english

Fichier:

PDF, 522 KB

english, 2005

19

Preface

Hsing-Huang Tseng, Byoung Hun Lee

Journal:

Microelectronic Engineering

Année:

2008

Langue:

english

Fichier:

PDF, 50 KB

english, 2008

20

Preface

Hsing-Huang Tseng, Byoung Hun Lee, Hi-Deok Lee

Journal:

Microelectronic Engineering

Année:

2009

Langue:

english

Fichier:

PDF, 97 KB

english, 2009

21

The progress and challenges of threshold voltage control of high-k/metal-gated devices for advanced technologies (Invited Paper)

Hsing-Huang Tseng, Paul Kirsch, C.S. Park, Gennadi Bersuker, Prashant Majhi, Muhammad Hussain, Raj Jammy

Journal:

Microelectronic Engineering

Année:

2009

Langue:

english

Fichier:

PDF, 763 KB

english, 2009

22

Interface characteristics of ZrO2 high-k gate dielectrics on epitaxial Ge capacitor layers after thermal desorption of Ge native oxide and Ge nitridation

Jungwoo Oh, Prashant Majhi, Hsing-Huang Tseng, Raj Jammy, David Q. Kelly, Sanjay K. Banerjee, Joe C. Campbell

Journal:

Thin Solid Films

Année:

2008

Langue:

english

Fichier:

PDF, 796 KB

english, 2008

23

Spectroscopic analysis of the process-dependent microstructure of ultra-thin high-k gate dielectric film systems

Patrick S. Lysaght, Gennadi Bersuker, Hsing-Huang Tseng, Raj Jammy

Journal:

Surface and Interface Analysis

Année:

2006

Langue:

english

Fichier:

PDF, 520 KB

english, 2006

24

Effect of Si interlayer thickness and post-metallization annealing on Ge MOS capacitor on Ge-on-Si substrate

Ook Sang Yoo, Jungwoo Oh, Chang Yong Kang, Byoung Hun Lee, In Shik Han, Won-Ho Choi, Hyuk-Min Kwon, Min-Ki Na, Prashant Majhi, Hsing-Huang Tseng, Raj Jammy, Jin Suk Wang, Hi-Deok Lee

Journal:

Materials Science and Engineering: B

Année:

2008

Langue:

english

Fichier:

PDF, 710 KB

english, 2008

25

The effect of silicon gate microstructure and gate oxide process on threshold voltage instabilities in p+-gate p-channel MOSFETs with fluorine incorporation

Hsing-Huang Tseng, Tobin, P.J., Baker, F.K., Pfiester, J.R., Evans, K., Fejes, P.L.

Journal:

IEEE Transactions on Electron Devices

Année:

1992

Langue:

english

Fichier:

PDF, 769 KB

english, 1992

26

A comparison of CVD stacked gate oxide and thermal gate oxide for 0.5-μm transistors subjected to process-induced damage

Hsing-Huang Tseng, Tobin, P.J., Hayden, J.D., Chang, K.-M., Miller, J.W.

Journal:

IEEE Transactions on Electron Devices

Année:

1993

Langue:

english

Fichier:

PDF, 621 KB

english, 1993

27

An ultra-shallow buried-channel PMOST using boron penetration

Pfiester, J.R., Hayden, J.D., Kirsch, H.C., Hsing-Huang Tseng, Ravaioli, U.

Journal:

IEEE Transactions on Electron Devices

Année:

1993

Langue:

english

Fichier:

PDF, 753 KB

english, 1993

28

A highly robust process integration with scaled ONO interpoly dielectrics for embedded nonvolatile memory applications

Shum, D.P., Hsing-Huang Tseng, Paulson, W.M., Ko-Min Chang, Tobin, P.J.

Journal:

IEEE Transactions on Electron Devices

Année:

1995

Langue:

english

Fichier:

PDF, 209 KB

english, 1995

29

Low-frequency noise in submicrometer MOSFETs with HfO2, HfO2/Al2O3 and HfAlOx gate stacks

Bigang Min, Devireddy, S.P., Celik-Butler, Z., Fang Wang, Zlotnicka, A., Hsing-Huang Tseng, Tobin, P.J.

Journal:

IEEE Transactions on Electron Devices

Année:

2004

Langue:

english

Fichier:

PDF, 594 KB

english, 2004

30

Asymmetry in Gate Capacitance–Voltage – Behavior of Ultrathin Metal Gate MOSFETs With Gate Dielectrics

Fei Li, Hsing-Huang Tseng, Register, L.F., Tobin, P.J., Banerjee, S.K.

Journal:

IEEE Transactions on Electron Devices

Année:

2006

Langue:

english

Fichier:

PDF, 175 KB

english, 2006

31

Defect Passivation With Fluorine and Interface Engineering for Hf-Based High- k/Metal Gate Stack Device Reliability and Performance Enhancement

Tseng Hsing-Huang, Tobin, P.J., Kalpat, S., Schaeffer, J.K., Ramon, M.E., Fonseca, L.R.C., Jiang, Z.X., Hegde, R.I., Triyoso, D.H., Semavedam, S.

Journal:

IEEE Transactions on Electron Devices

Année:

2007

Langue:

english

Fichier:

PDF, 1.29 MB

english, 2007

32

Origin of the Flatband-Voltage Roll-Off Phenomenon in Metal/High- Gate Stacks

Bersuker, G., Chang Seo Park, Huang-Chun Wen, Choi, K., Price, J., Lysaght, P., Hsing-Huang Tseng, Sharia, O., Demkov, A., Ryan, J.T., Lenahan, P.

Journal:

IEEE Transactions on Electron Devices

Année:

2010

Langue:

english

Fichier:

PDF, 822 KB

english, 2010

33

Effects of avalanche hole injection in fluorinated SiO/sub 2/ MOS capacitors

Vishnubhotla, L., Ma, T.-P., Hsing-Huang Tseng, Tobin, P.J.

Journal:

IEEE Electron Device Letters

Année:

1993

Langue:

english

Fichier:

PDF, 249 KB

english, 1993

34

The Effect of a Si Capping Layer on RF Characteristics of High-$k$ /Metal Gate SiGe Channel pMOSFETs

Park, Min Sang, Lee, Kyong Taek, Kang, Chang Yong, Choi, Gil-Bok, Sagong, Hyun Chul, Sohn, Chang Woo, Min, Byoung-Gi, Oh, Jungwoo, Majhi, Prashant, Tseng, Hsing-Huang, Lee, Jack C., Lee, Jeong-Soo, Ja

Journal:

IEEE Electron Device Letters

Année:

2010

Langue:

english

Fichier:

PDF, 335 KB

english, 2010

35

Fluorine diffusion on a polysilicon grain boundary network in relation to boron penetration from P/sup +/ gates

Hsing-Huang Tseng,, Orlowski, M., Tobin, P.J., Hance, R.L.

Journal:

IEEE Electron Device Letters

Année:

1992

Langue:

english

Fichier:

PDF, 261 KB

english, 1992

36

[IEEE 2010 IEEE Symposium on VLSI Technology - Honolulu, HI, USA (2010.06.15-2010.06.17)] 2010 Symposium on VLSI Technology - Si tunnel transistors with a novel silicided source and 46mV/dec swing

Jeon, Kanghoon, Loh, Wei-Yip, Patel, Pratik, Kang, Chang Yong, Oh, Jungwoo, Bowonder, Anupama, Park, Chanro, Park, C. S., Smith, Casey, Majhi, Prashant, Tseng, Hsing-Huang, Jammy, Raj, Liu, Tsu-Jae Ki

Année:

2010

Langue:

english

Fichier:

PDF, 471 KB

english, 2010

37

[IEEE NUPAD IV. Workshop on Numerical Modeling of Processes and Devices for Integrated Circuits, - Seattle, WA (May 31-June 1, 1992)] NUPAD IV. Workshop on Numerical Modeling of Processes and Devices for Integrated Circuits, - Fractal Network Diffusicm of Fluorine and Boron in Polysilicon Gates

Orlowski, M., Hsing-Huang Tseng,, Hance, R., Tobin, P.J.

Année:

1992

Langue:

english

Fichier:

PDF, 341 KB

english, 1992

38

[IEEE 2008 International Workshop on Junction Technology (IWJT) - Shanghai, China (2008.05.15-2008.05.16)] Extended Abstracts - 2008 8th International Workshop on Junction Technology (IWJT '08) - Low-voltage green transistor using ultra shallow junction and hetero-tunneling

Bowonder, Anupama, Patel, Pratik, Kanghoon Jeon,, Jungwoo Oh,, Prashant Majhi,, Hsing-Huang Tseng,, Chenming Hu,

Année:

2008

Langue:

english

Fichier:

PDF, 158 KB

english, 2008

39

[IEEE 2008 International Symposium on VLSI Technology, Systems, and Applications (VLSI-TSA) - Hsinchu, Taiwan (2008.04.21-2008.04.23)] 2008 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA) - Controlled threshold voltage of high-mobility Ge pMOSFETs with high-k/metal gate on epitaxial Ge films on Si substrates

Oh, Jungwoo, Majhi, Prashant, Lee, Hideok, Yoo, Ooksang, Lee, Sehoon, Banerjee, Sanjay, Tseng, Hsing-Huang, Jammy, Raj

Année:

2008

Langue:

english

Fichier:

PDF, 438 KB

english, 2008

40

Improvement of Thermal Stability of Ni Germanide Using a Ni–Pt(1%) Alloy on Ge-on-Si Substrate for Nanoscale Ge MOSFETs

Ying-Ying Zhang,, Jungwoo Oh,, Shi-Guang Li,, Soon-Yen Jung,, Kee-Young Park,, Ga-Won Lee,, Majhi, P., Hsing-Huang Tseng,, Jammy, R., Hi-Deok Lee,

Journal:

IEEE Transactions on Nanotechnology

Année:

2010

Langue:

english

Fichier:

PDF, 1.41 MB

english, 2010

41

Effects of Film Stress Modulation Using TiN Metal Gate on Stress Engineering and Its Impact on Device Characteristics in Metal Gate/High-$k$ Dielectric SOI FinFETs

Chang Yong Kang,, Ji-Woon Yang,, Jungwoo Oh,, Rino Choi,, Young Jun Suh,, Floresca, H.C., Jiyoung Kim,, Moon Kim,, Byoung Hun Lee,, Hsing-Huang Tseng,, Jammy, R.

Journal:

IEEE Electron Device Letters

Année:

2008

Langue:

english

Fichier:

PDF, 480 KB

english, 2008

42

[IEEE 2008 IEEE Silicon Nanoelectronics Workshop (SNW) - Honolulu, HI, USA (2008.06.15-2008.06.16)] 2008 IEEE Silicon Nanoelectronics Workshop - Low-voltage green transistor using hetero-tunneling

Bowonder, Anupama, Patel, Pratik, Jeon, Kanghoon, Oh, Jungwoo, Majhi, Prashant, Tseng, Hsing-Huang, Hu, Chenming

Année:

2008

Langue:

english

Fichier:

PDF, 1.38 MB

english, 2008

43

[IEEE IEEE International Electron Devices Meeting - Washington, DC, USA (5-8 Dec. 1993)] Proceedings of IEEE International Electron Devices Meeting - Thin CVD stacked gate dielectric for ULSI technology

Hsing-Huang Tseng,, Tobin, P.J.

Année:

1993

Langue:

english

Fichier:

PDF, 372 KB

english, 1993

44

[IEEE 2007 IEEE International Electron Devices Meeting - Washington, DC, USA (2007.12.10-2007.12.12)] 2007 IEEE International Electron Devices Meeting - Impact of flash annealing on performance and reliability of high-κ/metal-gate MOSFETs for sub-45 nm CMOS

Kalra, Pankaj, Majhi, Prashant, Heh, Dawei, Bersuker, Gennadi, Young, Chadwin, Vora, Nikhil, Harris, Rusty, Kirsch, Paul, Choi, Rino, Chang, Man, Lee, Joonmyoung, Hwang, Hyunsang, Tseng, Hsing-Huang,

Année:

2007

Langue:

english

Fichier:

PDF, 1.92 MB

english, 2007

45

[IEEE 2008 International Workshop on Junction Technology (IWJT) - Shanghai, China (2008.05.15-2008.05.16)] Extended Abstracts - 2008 8th International Workshop on Junction Technology (IWJT '08) - The challenges and progress of USJ formation & process integration for 32nm technology and beyond

Hsing-Huang Tseng,, Pankaj Kalra,, Jungwoo Oh,, Prashant Majhi,, Tsu-Jae King Liu,, Jammy, Raj

Année:

2008

Langue:

english

Fichier:

PDF, 99 KB

english, 2008

46

Gate etch induced diode leakage prevention with 7-nm CVD stacked gate dielectric

Perera, A.H., Hsing-Huang Tseng,

Journal:

IEEE Electron Device Letters

Année:

1996

Langue:

english

Fichier:

PDF, 471 KB

english, 1996

47

[IEEE 1994 IEEE International Electron Devices Meeting - San Francisco, CA, USA (11-14 Dec. 1994)] Proceedings of 1994 IEEE International Electron Devices Meeting - Suppression of MOSFET reverse short channel effect by N/sub 2/O gate poly reoxidation process

Tsui, P.G.Y., Hsing-Huang Tseng,, Orlowski, M., Shih-Wei Sun,, Tobin, P.J., Reid, K., Taylor, W.J.

Année:

1994

Langue:

english

Fichier:

PDF, 344 KB

english, 1994

48

Mechanisms Limiting EOT Scaling and Gate Leakage Currents of High- $k$/Metal Gate Stacks Directly on SiGe

Huang, J., Kirsch, P.D., Jungwoo Oh,, Se Hoon Lee,, Majhi, P., Harris, H.R., Gilmer, D.C., Bersuker, G., Dawei Heh,, Chang Seo Park,, Park, C., Hsing-Huang Tseng,, Jammy, R.

Journal:

IEEE Electron Device Letters

Année:

2009

Langue:

english

Fichier:

PDF, 329 KB

english, 2009

49

[IEEE ESSDERC 2007 - 37th European Solid State Device Research Conference - Muenchen, Germany (2007.09.11-2007.09.13)] ESSDERC 2007 - 37th European Solid State Device Research Conference - Dual work function high-k/Metal Gate CMOS FinFETs

Muhammad Mustafa Hussain,, Smith, Casey, Pankaj Kalra,, Ji-Woon Yang,, Gebara, Gabe, Sassman, Barry, Kirsch, Paul, Prashant Majhi,, Seung-Chul Song,, Harris, Rusty, Hsing-Huang Tseng,, Raj Jammy

Année:

2007

Langue:

english

Fichier:

PDF, 552 KB

english, 2007

50

[IEEE 2008 IEEE Silicon Nanoelectronics Workshop (SNW) - Honolulu, HI, USA (2008.06.15-2008.06.16)] 2008 IEEE Silicon Nanoelectronics Workshop - Improvement of thermal stability and reduction of Schottky barrier height of Ni germanide utilizing Ni-Pt(1%) alloy on Ge-on-Si substrate

Zhang, Ying-Ying, Oh, Jung-Woo, Han, In-Sik, Zhong, Zhun, Li, Shi-Guang, Jung, Soon-Yen, Park, Kee-Young, Shin, Hong-Sik, Choi, Won-Ho, Lee, Ga-Won, Wang, Jin-Suk, Majhi, Prashant, Tseng, Hsing-Huang,

Année:

2008

Langue:

english

Fichier:

PDF, 1.44 MB

english, 2008